SINOPLE
Surface engineered InGaN heterostructures on N-polar and nonpolar substrates for green light emitters
Goals of the project
- Molecular beam epitaxy on dislocation free GaN single crystals for semiconductor lasers in the green spectral range (520-550nm).
- Internal quantum efficiencies of green emitting InGaN devices beyond 30%
- Stimulated emission beyond 500 nm.
How to reach the goal
- Engineering the active structure of the device to reduce the effect of piezoelectric fields on carrier-recombination
- Exploring molecular beam epitaxy on non-polar, semipolar and N-polar
- surfaces to obtain maximum In incorporation
- Improving the structural perfection of the active layers by surface engineering.
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